Low - frequency noise and inelastic tunneling spectroscopy in Fe ( 1 1 0 ) / MgO ( 1 1 1 ) / Fe ( 1 1 0 ) epitaxial magnetic tunnel junctions
نویسندگان
چکیده
We report on tunnelling magnetoresistance (TMR), current–voltage (IV) characteristics and low-frequency noise in epitaxially grown Fe(1 1 0)/MgO(1 1 1)/Fe(1 1 0) magnetic tunnel junctions (MTJs) with dimensions from 2 2 to 20 20mm. The evaluated MgO energy barrier (0.5070.08 eV), the barrier width (13.170.5 Å) as well as the resistance times area product (771MOmm) show relatively small variation, confirming a high quality epitaxy and uniformity of all MTJs studied. At low temperatures (To10K) inelastic electron tunneling spectroscopy (IETS) shows anomalies related to phonons (symmetric structures below 100meV) and asymmetric features above 200meV. We explain the asymmetric features in IETS as due to generation of electron standing waves in one of the Fe electrodes. The noise power, though exhibiting a large variation, was observed to be roughly anti-correlated with the TMR. Surprisingly, for the largest junctions we observed a strong enhancement of the normalized low-frequency noise in the antiparallel magnetic configuration. This behavior could be related to the influence of magnetostriction on the characteristics of the insulating barrier through changes in local barrier defects structure. r 2005 Elsevier B.V. All rights reserved. PACS: 72.25. b; 72.70.+m; 73.21. b
منابع مشابه
Strong Reduction of 1/f Noise by Carbon Doping in Epitaxial Fe/MgO(100) 12 ML/Fe Magnetic Tunnel Junctions with Barrier Defects
We report on the strong in uence of carbon doping on 1/f noise in fully epitaxial Fe/MgO(100) 12 ML/Fe magnetic tunnel junctions in comparison with undoped junctions with a large density of barrier defects. Carbon in uences the relaxation of defects, the reconstruction of the interface and the symmetry transformation of interface resonance states, which are suggested to contribute to the strong...
متن کاملConductance enhancement due to interface magnons in electron-beam evaporated MgO magnetic tunnel junctions with CoFeB free layer deposited at different pressure
Articles you may be interested in Inelastic tunneling conductance and magnetoresistance investigations in dual ion-beam sputtered CoFeB(110)/MgO/CoFeB (110) magnetic tunnel junctions Giant tunneling magnetoresistance with electron beam evaporated MgO barrier and CoFeB electrodes Temperature dependence of tunnel resistance for Co Fe B ∕ Mg O ∕ Co Fe B magnetoresistive tunneling junctions: The ro...
متن کاملGrowth and morphology of the epitaxial Fe(110)/MgO(111)/Fe(110) Trilayers
Growth and surface morphology of epitaxial Fe(110)/MgO(111)/Fe(110) trilayers constituting a magnetic tunnel junction were investigated by low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). STM reveals a grain-like growth mode of MgO on Fe(110) resulting in dense MgO(111) films at room temperature as well as at 250 C. As observed by STM, initial deposition of MgO le...
متن کاملTunneling in double barrier junctions with "hot spots".
We investigate electronic transport in epitaxial Fe(100)/MgO/Fe/MgO/Fe double magnetic tunnel junctions with soft barrier breakdown (hot spots). Specificity of these junctions is continuous middle layer and nitrogen doping of the MgO barriers which provides soft breakdown at biases about 0.5 V. In the junctions with hot spots we observe quasiperiodic changes in the resistance as a function of b...
متن کاملTEM and EELS measurements of interface roughness in epitaxial Fe/MgO/Fe magnetic tunnel junctions
V. Serin,1,* S. Andrieu,2 R. Serra,1 F. Bonell,2 C. Tiusan,2 L. Calmels,1 M. Varela,3 S. J. Pennycook,3 E. Snoeck,1 M. Walls,4 and C. Colliex4 1CEMES-CNRS, BP 4347, 31055 Toulouse, France 2LPM, CNRS/Nancy Université, UMR7556, BP 239, F-54506 Vandoeuvre, France 3Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA 4Laboratoire de Physique des ...
متن کامل